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RAMAN SPECTROSCOPIC ANALYSIS OF DAMAGES IN SEMICONDUCTORS
RAMAN SPECTROSCOPIC ANALYSIS OF DAMAGES IN SEMICONDUCTORS
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机译:半导体损伤的拉曼光谱分析
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摘要
III-V semiconductor dot samples (particularly GaAs) have been studied with Raman microscopy. The samples were fabricated by electron beam lithography and dry etching. The non-resonant Raman scattering can provide direct information on the structure alteration and associated phonon bands. In particular, a previously unknown Raman line at 242cm-1 is attributed to a non-allowed phonon caused by damage. Direct Raman imaging in this band can reveal the damaged portions of the sample.
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