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Integrated structure current sensing resistor for power MOS devices, particularly for overload self-protected power MOS devices
Integrated structure current sensing resistor for power MOS devices, particularly for overload self-protected power MOS devices
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机译:用于功率MOS器件的集成结构电流检测电阻器,特别是用于过载自保护功率MOS器件
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摘要
An integrated structure current sensing resistor for a power MOS device consists of a doped region (20,21,50) extending from a deep body region (2) of at least one cell (1a) of a first plurality of cells, constituting a main power device, to a deep body region (2) of a corresponding cell (1b) of a second smaller plurality of cells constituting a current sensing device.
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