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Integrated structure current sensing resistor for power devices particularly for overload self-protected power MOS devices
Integrated structure current sensing resistor for power devices particularly for overload self-protected power MOS devices
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机译:用于功率器件的集成结构电流检测电阻器,特别是用于过载自保护功率MOS器件
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摘要
In integrated structure sensing resistor for a power MOS device consists of a doped region extending from a deep body region of at least one cell of a first plurality of cells, constituting a main power device, to a deep body region of a corresponding cell of a second smaller plurality of cells constituting a current sensing device. The first plurality of cells and the second plurality of cells are formed using trench technology.
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