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DEVICE FOR CHANGING POWER LOSS OF ECL GATE AND METHOD OF OPERATING ECL CIRCUIT

机译:改变ECL门的功率损耗的装置和操作ECL电路的方法

摘要

There is disclosed herein an ECL gate using switchable load impedance means to allow the gate to be placed in a low power-consumption mode while preserving the logic state existing at the outputs of the gate at the time it is switched into the low-power mode. N-channel or P-channel MOS transistors (M2,M3) are used as the switchable load impedances. The gates of these transistors (M2,M3) are coupled to a MODE control bus (12) which causes the MOS transistors (M2,M3) to switch between high-impedance and low-impedance states. Another MOS transistor (M1) having its gate coupled to the same MODE control bus (12) is used as the current source for the bias current to the conventional ECL current mirror (10). When low-power mode operation is desired, all the MOS transistors (M1,M2,M3) are switched to their high-impedance state. This reduces the bias current flowing through the ECL gate, thereby reducing its power consumption. The logic states at the output nodes (24,26) are preserved by virtue of the load impedance of the ECL switching transistors (Q1,Q2,Q3) having increased simultaneously with their collector currents having decreased.
机译:本文公开了一种使用可切换负载阻抗装置的ECL门,该ECL门允许将门置于低功耗模式,同时在切换到低功率模式时保持门输出处存在的逻辑状态。 。 N沟道或P沟道MOS晶体管(M2,M3)用作可切换负载阻抗。这些晶体管(M2,M3)的栅极耦合到MODE控制总线(12),其使MOS晶体管(M2,M3)在高阻抗状态和低阻抗状态之间切换。栅极耦合到同一MODE控制总线(12)的另一个MOS晶体管(M1)用作流向常规ECL电流镜(10)的偏置电流的电流源。当需要低功率模式操作时,所有MOS晶体管(M1,M2,M3)都切换到其高阻态。这减少了流经ECL栅极的偏置电流,从而降低了其功耗。由于ECL开关晶体管(Q1,Q2,Q3)的负载阻抗同时增加而其集电极电流减小,因此保留了输出节点(24、26)的逻辑状态。

著录项

  • 公开/公告号KR950005023B1

    专利类型

  • 公开/公告日1995-05-17

    原文格式PDF

  • 申请/专利权人 FAIRCHILD SEMICONDUCTOR CORP.;

    申请/专利号KR19870005652

  • 发明设计人 HERNDON WILIAM H.;

    申请日1987-06-04

  • 分类号H03K19/86;

  • 国家 KR

  • 入库时间 2022-08-22 04:11:45

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