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Structure of Z-cut Lithium Niobate (Z-cut LiNbO_3) blocking type optical modulator

机译:Z切铌酸锂(Z切LiNbO_3)阻挡型光调制器的结构

摘要

The present invention relates to a Z-cut LiNbO 3 (Z-cut LiNbO 3) that can be used for an integrated optical sensor for high-3) Cutoff type optical modulator (cutoff modulator).;The optical modulator according to the present invention comprises a ground cut lithium niobate substrate, a waveguide formed in a longitudinal direction on the substrate, a SiO2A buffer layer, a chromium electrode formed on a central portion of the buffer layer, and a ground electrode plate formed on the substrate so as to be spaced apart from the chromium electrode with a length corresponding to the buffer layer.;According to the present invention, it is possible to increase the measurement voltage range by widening the interval between the electrodes according to the applied voltage, and it is possible to optically shift the operating point of the modulator by using the annealing process And a plurality of optical voltage sensors having different measurement voltage ranges on a lithium niobate substrate can be manufactured at the same time.
机译:Z切割LiNbO 3(Z切割LiNbO 3)技术领域本发明涉及一种Z切割LiNbO 3(Z切割LiNbO 3),其可用于高 3 截止型光学调制器(截止调制器)的集成光学传感器。根据本发明的光学调制器包括:经地面切割的铌酸锂基片;在基片上沿纵向方向形成的波导; SiO 2 缓冲层;在电极的中央部分形成的铬电极。缓冲层,以及形成在基板上的接地电极板,该接地电极板与铬电极间隔开,其长度对应于缓冲层。根据本发明,可以通过扩大测量电压范围来增大测量电压范围。电极之间的间隔根据所施加的电压而定,并且可以通过使用退火工艺使调制器的工作点发生光学位移,并且在锂电池上具有不同测量电压范围的多个光学电压传感器铌酸盐衬底可以同时制造。

著录项

  • 公开/公告号KR950013014A

    专利类型

  • 公开/公告日1995-05-17

    原文格式PDF

  • 申请/专利权人 천성순;

    申请/专利号KR19930022377

  • 发明设计人 신상영;이상신;계광희;

    申请日1993-10-26

  • 分类号H03C3/36;

  • 国家 KR

  • 入库时间 2022-08-22 04:11:19

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