Method of forming silicon microstructure using porous silicon epitaxial method

摘要

The present invention relates to a method for forming a silicon microstructure,⁺A porous silicon 2 is formed by an anodic reaction in a hydrofluoric acid (HF), a silicon epitaxial layer 3 is grown on the entire surface of the substrate, and then a silicon epitaxial layer 3 is formed on the silicon epitaxial layer 3 And the metalization process and the surface stabilization process are carried out to form p⁺Type silicon layer 4, an oxide film 5 and a metal electrode film 6 are sequentially formed on the surface of the porous silicon layer 2, and the silicon epitaxial layer 3 is dry-) And the porous silicon (2) is selectively etched by NaOH solution or the like to form a precise cavity in a desired portion. Thus, precise microstructures can be obtained without completely affecting other manufacturing processes This is a method for forming a silicon microstructure using a porous silicon epitaxial method capable of mass production.