首页> 外国专利> Self-Disable Power-Up Detection Circuit (SELT-DISABLING POWER-UP DETECTION CIRCUTT)

Self-Disable Power-Up Detection Circuit (SELT-DISABLING POWER-UP DETECTION CIRCUTT)

机译:自禁用上电检测电路(禁止上电检测电路)

摘要

The CMOS power-up reset circuit provides a power-up output signal useful for an external circuit when the applied power supply voltage exceeds a first predetermined value, wherein the power-up and the voltage that is part of the power supply voltage And a ratio transistor divider to generate on the sense node. The circuit regenerates latching when the rising power supply voltage and the sense node voltage differ by a second predetermined value, preliminary to P-channel threshold voltage or more. The feedback signal disables the flow of current through the power-up reset circuit to substantially eliminate static power consumption at a later time, and the power-up output signal is generated. Circuit provision is incorporated to prevent capacitive coupling from the rising power supply voltage to the critical internal circuit node through the N-well of the P-channel transistor. The first predetermined value of the applied power supply voltage for which the circuit provides the power-up output signal may be formed by adjusting the ratio of the two P-channel transistors.
机译:当所施加的电源电压超过第一预定值时,CMOS上电复位电路提供对外部电路有用的上电输出信号,其中,上电与作为电源电压一部分的电压成比例。晶体管分频器在感测节点上生成。当上升的电源电压和感测节点电压相差第二预定值时,该电路会重新生成锁存,该预定值是P通道阈值电压或更高。反馈信号使流过上电复位电路的电流无效,从而在以后基本上消除了静态功耗,并产生了上电输出信号。并入了电路,以防止电源电压上升通过P沟道晶体管的N阱与关键内部电路节点发生电容性耦合。可以通过调节两个P沟道晶体管的比率来形成电路为其提供上电输出信号的施加电源电压的第一预定值。

著录项

  • 公开/公告号KR950702760A

    专利类型

  • 公开/公告日1995-07-29

    原文格式PDF

  • 申请/专利权人 존 엠. 클락 3세;

    申请/专利号KR19940704556

  • 发明设计人 샤이 마이클 제이;

    申请日1994-12-14

  • 分类号H03K17/22;

  • 国家 KR

  • 入库时间 2022-08-22 04:10:42

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