Algaas - electroluminescent diode with double heterojunction and with p - type according to the top.

摘要

A semiconductor light emitting heterostructure device is disclosed. The device comprises an n-type GaAs substrate, a first n-type laeyr of AlGaAs adjacent to the substrate, a second p-type light emitting AlGaAs layer adjacent to the first layer, and a third p-type AlGaAs layer suitable for bonding to an aluminum contact. The device starts with an n- type substrate which is more readily available and has a p-side up configuration which is more suitable for bonding to an aluminum contact.