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Semiconductor arrangement in which an N-channel MOSFET, a P-channel MOSFET and a non-volatile memory cell are formed in a chip.
Semiconductor arrangement in which an N-channel MOSFET, a P-channel MOSFET and a non-volatile memory cell are formed in a chip.
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机译:在芯片中形成有N沟道MOSFET,P沟道MOSFET和非易失性存储单元的半导体装置。
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摘要
An n-channel MOSFET (102), a p-channel MOSFET (104) and a nonvolatile memory cell (100) are provided for the same semiconductor substrate (1). The nonvolatile memory cell (100) is formed on the semiconductor substrate (1), the n-channel MOSFET (102) is formed in a p-type well region (11) of the semiconductor substrate (1), and the p-channel MOSFET (104) is formed in an n-type well region (12) of the semiconductor substrate (1).
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