plasma processing of iii - v semiconductors, controlled in photolumineszenz spectroscopy.

摘要

Monitoring wafer changes in situ during plasma treatment provides real-time feedback for developing and controlling device processing. Photoluminescence spectroscopy is described for detecting end point during BCl3 plasma etching of hetero epitaxial films of III-V semiconductors and for monitoring H2 plasma passivation of III-V semiconductor surfaces. When used herein the term plasma processing is intended to include the standard dry processes including processes termed reactive ion processing.