Integrated laser-modulator monolithic component with quantum multi-well structure.

摘要

This component comprises an InP substrate, a laser (L) formed by a stack of epitaxial semiconductor layers on this substrate including an active layer (18) and a periodic Bragg grating (12) fixing the wavelength emitting the laser at a value slightly greater than the optimum wavelength of the laser gain peak; an electro-optical modulator (M) formed of this same stack of semiconductor layers including an absorbent layer (18) with the exception of the Bragg grating, the active layer of the laser and the absorbent layer of the modulator being formed by the same structure epitaxied with several then quantum constrained or not, the modulator operating according to the confined Stark effect, and means for electrically controlling the semiconductor layers of the laser and those of the modulator.