Monolithically integrated laser-modulator with multiquantum well structure

摘要

Laser-modulator monolithic integrated component with a multiple quantum well structure. This component comprises a InP substrate, a laser (L) formed by a stack of semiconductor layers grown epitaxially on this substrate, including an active layer (18), and a periodic Bragg grating (12) fixing the emission wavelength of the laser to a value slightly greater than the optimum wavelength of the gain peak of the laser; an electrooptic modulator (M) formed from this same stack of semiconductor layers, including an absorbing layer (18), with the exception of the Bragg grating, the active layer of the laser and the absorbing layer of the modulator both being formed by the same epitaxially grown structure with several quantum wells, which are constrained (strained) or unconstrained (unstrained), the modulator functioning according to the confined Stark effect, and means for electrically controlling the semiconductor layers of the laser and those of the modulator. IMAGE