Semiconductor device with a multilayered contact structure having a boro- phosphate silicate glass planarizing layer

摘要

A high-density semiconductor memory device has a self-aligning contact structure for electrical connection between lower and upper conductive layers, and an inter-insulating layer with a via for forming the contact structure. The contact structure has a contact pad including a first conductive layer electrically connected with the lower conductive layer within the via and formed on a predetermined portion of the inter- insulating layer around the groove, a planarizing material filling up the groove formed on the first conductive layer, and second conductive layers formed on the planarizing material and exposed first conductive layer.