首页> 外国专利> Coupled quantum well optical intensity modulator for INP based optoelectronic integrated circuits and methods therefor

Coupled quantum well optical intensity modulator for INP based optoelectronic integrated circuits and methods therefor

机译:用于基于inp的光电集成电路的耦合量子阱光强度调制器及其方法

摘要

An integrated optical intensity modulator. The modulator is an optical waveguide on a semi-insulating substrate and having a core layer for transmitting an optical signal. The modulator includes contiguous the core layer an active cladding which has a multicoupled quantum well structure. The multicoupled quantum well includes at least one pair of quantum wells separated by a barrier. The modulator further includes first and second additional claddings wherein the core layer and the active cladding are interposed between the additional claddings. A voltage source generates an electric field through the active cladding which varies the refractive index of the active cladding as a function of the strength of the electric field for modulating the optical signal.
机译:集成的光强度调制器。调制器是在半绝缘基板上的光波导,并且具有用于传输光信号的芯层。调制器包括与核心层相邻的有源包层,该有源包层具有多耦合量子阱结构。多耦合量子阱包括由势垒分隔的至少一对量子阱。调制器还包括第一和第二附加包层,其中芯层和有源包层插入在附加包层之间。电压源通过有源包层产生电场,该电场根据用于调制光信号的电场强度来改变有源包层的折射率。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号