Electron beam direct writing system for ULSI lithography with facilitated rotation and gain corrections of shot patterns and electron beam direct writing method for same

摘要

In an electron beam direct writing system having an aperture member, an evaluation aperture is provided for the aperture member for mapping evaluation patterns in a drawn pattern on a semiconductor substrate. Short lines having a predetermined width are arranged at first pitches in horizontal and vertical directions in peripheral portions of a first shot pattern to form a first line/interval pattern. Similarly, short lines are arranged at second pitches slightly different from the first pitches in the horizontal and vertical directions in peripheral portions of second and third shot patterns to form second line/interval patterns. Quantities of rotation and gain of a shot are determined from matching positions between evaluation patterns of the shot patterns. It is permitted in a short period of time to adjust the exposure dose, correct positional errors such as a stitching error, align component members and achieve an evaluation on reproductivity.