Process for depositing oxide film on metallic substrate by heat plasma flash evaporation method

摘要

The generation of a reaction product is suppressed between a metallic substrate and plasma in depositing a ceramic intermediate layer on the metallic substrate in a process for depositing an oxide film on the metallic substrate by thermal plasma flash evaporation method. Thus, there is no reaction phase in the ceramic intermediate layer and the metallic substrate, and an intermediated buffer layer of only oxide ceramic is deposited on a flat surface of the metallic substrate. The intermediate ceramic layer is deposited in inert atmosphere of a low oxygen concentration at a temperature of less than 600° C. for the metallic substrate. Then, a superconducting thin film is deposited on the ceramic intermediate layer.