LIGHT INTENSITY MODULATION ELEMENT AND SEMICONDUCTOR LASER WITH LIGHT INTENSITY MODULATION ELEMENT

摘要

PURPOSE: To make it possible to obtain a large transmission capacity and to make the distance of optical communication longer and capacity higher. ;CONSTITUTION: A light absorption layer 4 is formed of a bulk material and a difference (energy detuning ΔE) between its band gap energy Eg0 and the photo energy Ein of incident light (light to be modulated) Pin is so selected as to enter such a range where the absorption generated by voltage impression increases and a refractive index decreases. Further, the thickness da and length L of the light absorption layer 4 are so set that the absorption of the light at the time of voltage non-impression is suppressed to the lowest possible level and that desired extinction efficiency is obtd. An electric field is applied on the light absorption layer 4 and the absorption coefft. of the incident light Pin is changed by this electric field when voltage is impressed on this layer.;COPYRIGHT: (C)1996,JPO