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PRODUCTION OF ZINC-SCANDIUM SINGLE CRYSTAL, ELECTRICALLY CONDUCTIVE ZINC-SCANDIUM SINGLE CRYSTAL AND SINGLE CRYSTAL SUBSTRATE
PRODUCTION OF ZINC-SCANDIUM SINGLE CRYSTAL, ELECTRICALLY CONDUCTIVE ZINC-SCANDIUM SINGLE CRYSTAL AND SINGLE CRYSTAL SUBSTRATE
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机译:锌SC单晶,导电锌Z单晶和单晶基体的生产
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摘要
PURPOSE: To produce a ZnSe single crystal provided with electrical characteristics of low resistance in a grown state of the crystal by subjecting a ZnSe single crystal to crystal growth through adding a boron source to a ZnSe raw material under specified conditions. ;CONSTITUTION: In this production, a ZnSe single crystal is subjected to crystal growth by adding a boron source (e.g. boron oxide) to a ZnSe raw material so that the raw material contains 1×106 to 5&m1019 atoms/cm3 boron as an n-type dopant. As a result, the conventional heat treatment in molten zinc of the crystal for providing it with low resistance is not required. Also, at the time of performing the crystal growth of a ZnSe single crystal by a melting growth method such as Bridgeman method or pulling-up method, this crystal growth is preferably performed in an atmosphere to which a Zn vapor pressure in equilibrium with the Zn vapor pressure of the ZnSe molten liquid is applied.;COPYRIGHT: (C)1996,JPO
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机译:目的:通过在特定条件下向ZnSe原料中添加硼源,使ZnSe单晶进行晶体生长,从而制造在晶体生长状态下具有低电阻电特性的ZnSe单晶。 ;组成:在该生产中,通过向ZnSe原料中添加硼源(例如氧化硼),使ZnSe单晶进行晶体生长,以使原料中含有1×10 6 Sup>至5&m10 19 Sup>原子/ cm 3 Sup>硼作为n型掺杂剂。结果,不需要用于在晶体的熔融锌中提供低电阻的常规热处理。另外,在通过诸如Bridgeman法或提拉法的熔融生长法进行ZnSe单晶的晶体生长时,优选在Zn蒸气压与Zn平衡的气氛中进行该晶体生长。施加ZnSe熔融液的蒸气压。;版权所有:(C)1996,日本特许厅
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