首页> 外国专利> PRODUCTION OF LIQUID CRYSTAL DISPLAY SUBSTRATE, APPARATUS THEREFOR, METHOD FOR EVALUATING SEMICONDUCTOR CRYSTAL, PRODUCTION OF SEMICONDUCTOR CRYSTAL THIN FILM AND PRODUCTION DEVICE OF SEMICONDUCTOR CRYSTAL THIN FILM

PRODUCTION OF LIQUID CRYSTAL DISPLAY SUBSTRATE, APPARATUS THEREFOR, METHOD FOR EVALUATING SEMICONDUCTOR CRYSTAL, PRODUCTION OF SEMICONDUCTOR CRYSTAL THIN FILM AND PRODUCTION DEVICE OF SEMICONDUCTOR CRYSTAL THIN FILM

机译:液晶显示基板的制造,装置,半导体晶体的评价方法,半导体薄膜的制造,以及半导体薄膜的制造装置

摘要

PURPOSE: To make it possible to assure the good performance of driving circuit parts in a process for producing an LCD substrate by forming the driving circuit parts on amorphous semiconductor films formed on a glass substrate. ;CONSTITUTION: The amorphous silicon film 2 is formed by a reduced pressure CVD on the glass substrate 1. This amorphous silicon film 2 is irradiated with laser beams in an island form to polycrystallize the irradiated regions. In such a case, for example, each region is irradiated with the energy below the irradiation energy necessary for the polycrystallization and is then irradiated with the necessary energy. The band gap spectral reflectivity of the reflected light of the irradiated regions and the spectral reflectivity of a reference are compared and the energy is controlled while the progressing condition of the crystallization state is recognized by the degree of approximation thereof. The interior of the irradiated regions is thereafter subjected repeatedly to a film forming treatment and etching, by which the driving circuit parts consisting of the semiconductor elements are formed. For example, the wiring with a previously formed TFTs 5 is executed by the film forming treatment in this stage.;COPYRIGHT: (C)1996,JPO
机译:目的:通过在玻璃基板上形成的非晶半导体膜上形成驱动电路部件,来确保在制造LCD基板的过程中驱动电路部件的良好性能。组成:非晶硅膜2是通过减压CVD在玻璃基板1上形成的。该非晶硅膜2被岛状的激光束照射以使被照射的区域多晶化。在这种情况下,例如,以低于多晶化所需的照射能量的能量照射每个区域,然后以所需的能量照射。比较照射区域的反射光的带隙光谱反射率和基准的光谱反射率,并且在通过近似程度识别结晶状态的进行条件的同时控制能量。之后,对被照射区域的内部反复进行成膜处理和蚀刻,由此形成由半导体元件构成的驱动电路部。例如,在该阶段通过成膜处理来执行与预先形成的TFT 5的布线。版权所有:(C)1996,JPO

著录项

  • 公开/公告号JPH08129189A

    专利类型

  • 公开/公告日1996-05-21

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LTD;

    申请/专利号JP19930311138

  • 发明设计人 IMAHASHI KAZUNARI;HAMA KIICHI;HATA JIRO;

    申请日1993-11-16

  • 分类号G02F1/136;G02F1/1333;H01L29/786;H01L21/336;

  • 国家 JP

  • 入库时间 2022-08-22 04:01:14

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