PURPOSE:To enable a smooth etched surface having no residue to be formed, by cooling a lower electrode on which a wafer is mounted and then making an upper electrode facing the lower electrode be etched in a state where the temperature of the upper electrode is higher than that of the lower electrode. CONSTITUTION:In a dry etching method in which fluorine-group gases and oxygenous gases are used as etching gases and a parallel-flat plate device is used, a lower electrode on which a wafer is mounted is cooled and then an upper electrode facing the lower electrode is etched in a state where the temperature of the upper electrode is higher than that of the lower electrode. For example, a plasma nitride (P-SiN) film 2 is piled on an Al wiring 1, and a resist 3 is then piled thereon for a flattening process. Successively, when a sample (c) is put and etched in a conventional RIE device, the lower electrode (on the cathode side) on which the wafer is mounted is cooled as it is by using tap water, and the water flowing on the upper electrode (on the anode side) is made to pass through a heat exchanger so as to be heated at 50 deg.C. Hence, a very smooth etched surface having no residue can be formed.
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