Light dry Etsu quenching apparatus and method

摘要

PURPOSE:To excite an etching gas by intense vacuum ultraviolet beams by introducing vacuum ultraviolet beams from an electron synchrotron radiation source into a chamber through a differential-pressure exhaust section under the state in which the etching gas at fixed pressure is introduced into the chamber. CONSTITUTION:An electron synchrotron radiation source U, differential-pressure exhaust sections 15, 16 guiding vacuum ultraviolet beams 12 from the electron synchrotron radiation source U, and a chamber 17 being connected at the noses of the differential-pressure exhaust sections 15, 16 and having at least an etching gas introducing port 18 and an etched article holding section 19 are mounted. Vacumm ultraviolet beams 12 are introduced directly into the chamber 17 from the vacuum ultraviolet beam source U under the state in which an etching gas at fixed pressure is induced into said chamber 17. Vacuum ultraviolet beams 12 emitted from the electron synchrotron U are condensed by a toroidal mirror 28 and guided into the chamber 17, the etching gas or both the etching gas and the surface of an article to be etched 21 are irradiated, and the article to be etched 21 is etched.