SIMULATION METHOD IN SEMICONDUCTOR MANUFACTURING PROCESS, FORMING METHOD OF IMPURITY DIFFUSION REGION AND HEAT TREATMENT EQUIPMENT

摘要

PURPOSE: To provide a simulation method capable of simulation concerning impurity introduction and the impurity concentration distribution of a thermal diffusion region wherein dependency on dosage is considered, while applying a simple and high speed technique. CONSTITUTION: In a semiconductor process, when impurities are introduced in a semiconductor substrate and diffused by heat treatment like RTA, the concentration distribution of impurities is simulated by a process containing at least operation on the basis of dosage of introduced impurities. In the heat treatment process, the dosage of introduced impurities is measured (2), parameters are extracted (3) and operated (5) about the measured dosage, and a sample is formed at need by a heat treatment equipment part (1).