SURFACE TREATMENT FOR STRONTIUM TITANATE SUBSTRATE

摘要

PURPOSE: To finely control epitaxial growth with a unit of atomic layer by annealing a strontium titanate substrate at a high temperature in an oxygen atmosphere and forming the topmost surface structure of TiO₂. ;CONSTITUTION: A strontium titanate substrate, hereinafter referred to as STO substrate, is annealed at a high temperature of approximately 1000±200°C in an oxygen atmosphere. Thus, the topmost surface of the STO substrate is formed of approximately 100% TiO₂. When The STO substrate is heated to nearly 1000°C, Ti, which is the element of the substrate, stays on the surface of the substrate. However, Sr jumps out from the surface of the substrate, and as a result, SrO is not allowed to remain on the topmost surface of the substrate. Such mechanism allows the TiO₂ plane to be formed on the topmost surface of the substrate.;COPYRIGHT: (C)1996,JPO