Josephson destructive read die storage circuit

摘要

PURPOSE:To realize a destructive read type random access memory by specifying the sum of the critical current value of a first Josephson junction and inductance values of first and second superconductive lines. CONSTITUTION:Josephson junctions 1 and 2 have critical current values I1 and I2, and first-third superconductive lines 3-5 are electrically expressed with inductances of inductance values L1-L3. A gate current Ig corresponds to the sense current, and a control current IC corresponds to the bit line word current. Transition to a voltage state occurs if currents cross a threshold curve in a gate current area where the absolute value of the gate current is larger than that of the gate current at a critical point 105, and magnetic flux quantum transition occurs if currents cross the threshold curve in the gate current area where the absolute value of the gate current is smaller. Respective parameter values of this circuit are so selected that I1I2 and L1+L2L3 are true. Thus, the destructive read type random access memory is realized.