ION-IMPLANTATION APPARATUS AND ION BEAM NEUTRALIZING APPARATUS TO BE EMPLOYED THEREFOR AND METHOD FOR INTRODUCING NEGATIVE CHARGE ELECTRON INTO POSITIVE CHARGE ION BEAM

摘要

PROBLEM TO BE SOLVED: To provide a beam-neutralizing apparatus which neutralizes ion beam and prevents a wafer from being charged, and to provide an ion-implantation apparatus. ;SOLUTION: An ion-beam neutralizing apparatus 150 comprises electron- emitting filaments 210a-210f and an electron deflector 226 which induces electrodes from an electron source into an ion beam 20. Electric potential bias suitable for accelerating electrons in the direction of parting generated electrons from the filaments 210a-210f is applied to an acceleration grid 220 from an electric power source. Electrons pass an electric field which is restricted by a second grid 224. The electrons pass the second grid and are deflected by an electric field between the second grid 224 and a parabolic metal deflector 226. Consequently, the ion beam is neutralized before the ion beam comes into collision with a wafer.;COPYRIGHT: (C)1996,JPO