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Electromigration Resistant Metallization Structures for Micro Circuit Connections with Radio Frequency Reactive Metallized Titanium, Tungsten and Gold
Electromigration Resistant Metallization Structures for Micro Circuit Connections with Radio Frequency Reactive Metallized Titanium, Tungsten and Gold
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机译:射频活性金属化钛,钨和金的微电路连接的抗电迁移金属化结构
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摘要
Two metallization schemes of PtSi/TiW/TiW(N)/Au (Type I) and PtSi/TiW/TiW(N)/TiW/Au (Type II) and associated process are described for microcircuit interconnections. The metallization schemes and process are capable of IC-interconnections with a metal-pitch as small as 1.5 mum, or even smaller. The metallization schemes are reliable for continuous high temperature and high current operations.
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