AN IMPROVED ANTIFUSE WITH DOUBLE VIA, SPACER-DEFINED CONTACT AND METHOD OF MANUFACTURE THEREFOR

摘要

The present invention provides for a method of forming an antifuse in an integrated circuit having a first insulating layer (11) on a semiconductor substrate. The method comprises forming a first metal interconnection layer (12) on the first insulating layer; forming a relatively thin, second insulating layer (15) over the first metal interconnection layer with a via (16) where the antifuse is to be located to expose the first metal interconnection layer; forming first spacer regions (14) on the sidewalls of the second insulating layer; forming a programming layer (21) on the second insulating layer and in the via to contact the first metal interconnection line; forming second spacer regions (20) on the sidewalls of the programming layer in the via; forming a barrier metal layer (24) on the programming layer; forming a relatively thick, third insulating layer (25) on the barrier metal layer with a second aperture to expose a portion of the barrier metal layer; and forming a second metal interconnection layer (32, 33) on the third insulating layer and in the second aperture to contact the portion of the barrier metal layer.