METHOD OF MANUFACTURING A DRAM CELL HAVING WORDLINE BURIED

摘要

forming a trench by etching device separation region; forming impurity diffusion region to enhance the function of device separation; filling the trench with oxide material; forming a groove in the region where a word line is to be formed; forming a gate oxide layer; forming an independent word line in a groove; forming an insulating spacer on the surface of the word line; forming a drain and a source on the groove; forming a bit line to be contacted to the source; and forming a storage electrode that is insulated from the bit line.