A method for depositing titanium nitride on a semiconductor wafer and a method for depositing titanium nitride on a semiconductor substrate

摘要

The present invention provides a method of sputter deposition that controls nitriding of a target in two modes to provide novel and stable control over the properties of the formed TiN layer. One such layer is deposited at 3.1 times the speed of the other layer. In addition, new diffusion barrier layers made from two types of TiN are provided.