Sample preparation method for cross-sectional observation of microscopic area for electron microscopic analysis

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sample preparation method for cross-sectional observation of microscopic regions for electron microscopic analysis, and more particularly, to fabrication of a sample for analyzing micro-D-defects present in a silicon wafer substrate.;Crystal defects in silicon single crystal wafers are mainly known as A- and D- defects. A-defects are known as silicon creep dislocation loops by transmission electron microscopy. In cross section, D-defects are very difficult to identify and their identity is not well known.;The present invention is to provide a method for manufacturing a TEM sample to find the location of the D-defect and to display the surface of the sample to know the exact position when processing the sample using FIB, Scanning Electron Microscpoe and By applying the Electron Beam Induced Current device to find the exact location of defects in the sample from the image by the electron beam induced current device, X, Y electron beam scanning of the scanning electron microscope It provides a method for producing a sample for cross-sectional observation of the microscopic area for electron microscopy analysis so that the precise position can be known in the focused electron beam (Focused Electron Beam) equipment by marking the position on the sample surface using the) function.