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High Magnetic Finite Impact Response Filter Structure for Highly Integrated Circuit Implementation

机译:用于高集成电路实现的高磁性有限冲击响应滤波器结构

摘要

The present invention relates to a high-order finite impact response (FIR) filter structure suitable for high integrated circuit (VLSI) implementation, and has a problem in that it is difficult to implement a direct circuit, because many gates are required for the filter implementation. In order to improve this point, the number of multiplexing is increased by reducing the operation speed required in one tap of the present invention, and the input signal is converted into the SPT term 2 to improve the structure of the calculation circuit. Invented to reduce the number of gates, the present invention facilitates the implementation of VLSI of higher order finite impact response (FIR) filters by reducing the number of gates.
机译:本发明涉及一种适用于高集成电路(VLSI)实现的高阶有限冲击响应(FIR)滤波器结构,并且具有以下问题:由于滤波器需要许多门,因此难以实现直接电路。实施。为了改善这一点,通过降低本发明的一抽头所需的运算速度来增加多路复用的次数,并且将输入信号转换为SPT项2以改善计算电路的结构。为了减少门的数量而发明,本发明通过减少门的数量来促进高阶有限冲击响应(FIR)滤波器的VLSI的实现。

著录项

  • 公开/公告号KR960028464A

    专利类型

  • 公开/公告日1996-07-22

    原文格式PDF

  • 申请/专利权人 구자홍;

    申请/专利号KR19940036872

  • 发明设计人 임일택;

    申请日1994-12-26

  • 分类号H04N7/13;

  • 国家 KR

  • 入库时间 2022-08-22 03:44:42

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