Plasma processing method (PLASMA PROCESSING METHOD)

摘要

The present invention provides a method for correcting an etching chamber of a plasma processing apparatus having a high throughput and supporting a wafer on an electrode by electrostatic clamping while etching using hydrogen bromide (HBr) as an etching gas. When the electrostatic charge on the electrostatically fixed wafer on the electrode is removed after the etching is completed, O₂The gas flows into the etching chamber from the gas flow rate control device. O₂A plasma of gas is generated, and the charge on the wafer flows to the ground through the plasma, and at the same time, the inside of the etching chamber is cleaned.