PROCESS OF TREATMENT OF SURFACE OF GALLIUM ARSENIDE SEMICONDUCTOR STRUCTURES

摘要

FIELD: microelectronics. SUBSTANCE: in compliance with specified process plates of gallium arsenide are treated in concentrated hydrogen peroxide for the course of 5-10 min. Then structures are washed in deionized running water for 15 min. Oxygen-carrying impurities are removed by subsequent treatment in concentrated aqueous solution of ammonia for the course of 3-7 min. This process diminishes twofold content of carbon on surface of gallium arsenide. EFFECT: improved quality of gallium arsenide semiconductor structures thanks to diminished level of their contamination with carbon and keeping of geometrical dimensions of structures. 1 tbl