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Method of fabricating n-type antimony-based strained layer superlattice
Method of fabricating n-type antimony-based strained layer superlattice
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机译:n型锑基应变层超晶格的制造方法
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摘要
High speed Group III-Sb materials are n-doped in a molecular beam epitaxy process by forming a superlattice with n-doped strained layers of a Group III-V compound upon Group III-Sb base layers. The base layers have lower conduction band energy levels than the strained layers, and allow doping electrons from the strained layers to flow into the base layers. The base layers preferably comprise Al.sub.x Ga.sub.1-x Sb, while the strained layers preferably comprise a binary or ternary compound such as Al.sub.y Ga.sub.1-y As having a single Group V component, where x and y are each from 0 to 1.0. The strained layers can be n-doped with silicon or tin, which would produce p-type doping if added directly to the base layers.
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机译:在分子束外延工艺中,通过在III-Sb基层上形成具有n-掺杂的III-V族化合物应变层的超晶格,在分子束外延工艺中对n-Sb高速材料进行n掺杂。基层具有比应变层低的导带能级,并且允许来自应变层的掺杂电子流入基层。基层优选包含Al x Ga 1-x Sb,而应变层优选包含二元或三元化合物,例如具有单个V族的Al y Ga 1-y As。分量,其中x和y分别为0到1.0。应变层可以用硅或锡进行n掺杂,如果直接添加到基层中,则会产生p型掺杂。
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