Crystal-growth method and semiconductor device production method using the crystal-growth method

摘要

A crystal-growth method includes a process of filling three materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other two being ZnSe and ZnS compounds, in their respective effusion cells, and a crystal-growth process of a Zn. sub.1-Y Mg.sub.Y S.sub.Z Se.sub.1-Z (0 Y 1 and 0 Z 1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.