N channel output driver with boosted gate voltage

摘要

Disclosed is an output circuit capable of improving the load driving performance of a semiconductor device. The output circuit has first and second N channel MOS transistors connected in series between a high- potential power supply and a low-potential power supply. Both transistors produce an output signal at a node therebetween in response to complementary input signals. The output circuit includes a booster circuit, connected to the first transistor. The booster circuit is supplied with power from the high-potential power supply. In response to a clock signal and an input signal for enabling the first transistor, the booster circuit produces a voltage higher than the potential level of the high-potential power supply and applies the higher voltage to the first transistor.