Semiconductor memory e.g. flash memory used in portable computer, supplies voltage from self boosting drivers, to global word lines through NMOS transistors with gate voltage maintained at preset value by precharging

摘要

Sector selectors (SSi,SSj) control depletion mode transistors (DT0i-DTni,DT0j-DTnj) to select memory cell sectors (MCSi,MCSj). The voltage selectively supplied to self boosting drivers (SBD0-SBDn) by a partial row decoder (56), is supplied to selected global word line through NMOS transistors whose gate voltage is maintained at a predetermined value by precharging circuits (CPC0-CPCk). An Independent claim is also included for word line selection circuit.