首页> 外国专利> Dielectric structures having embedded gap filling RIE etch stop polymeric materials of high thermal stability

Dielectric structures having embedded gap filling RIE etch stop polymeric materials of high thermal stability

机译:具有嵌入式间隙填充RIE蚀刻的介电结构具有高的热稳定性

摘要

Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.
机译:包含介电材料的结构,其中嵌入了聚合反应离子蚀刻阻挡层。优选的介电材料是聚合物,优选聚酰亚胺材料。 RIE蚀刻阻挡层是具有芳族组分的共聚物,该芳族组分具有高的热稳定性并且具有选自金属环环丁烷,金属环丁烯和乙烯基的交联组分。蚀刻阻挡层作为无溶剂的液体沉积,可以填充介电材料和嵌入其中的电导体之间的间隙。液态聚合物被固化成固体不溶状态。其中嵌入有电导体的结构可用于电子应用。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号