Low capacitance and spacer based antifuse structure for high reliability and its production manner

摘要

(57) Abstract This antifuse stipulates the apex surface and the flank surface, the 1st electrode (33) the base which it possesses on (30) it includes. The antifuse material (34), at least with respect to one part of the apex surface and the flank surface it is placed on one part at least the 1st electrode (33) in on, the 2nd electrode (42) the antifuse material (34) is on. With this configuration, as a portion of antifuse configuration you can avoid the problem of the defect in etching the oxide, capacitance of the device is very low simultaneously.