MANUFACTURE OF SEMICONDUCTOR DEVICE, MANUFACTURE OF INSULATED GATE SEMICONDUCTOR DEVICE, AND INSULATED GATE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a source contact region in a self-matching manner without using photolithography, and realize a high level of integration. ;SOLUTION: By using a first film 12 which was used for forming a trench, a second film 14 covering the trench surface is formed. By etching back the whole surfaces of the first film 12 and the second film 14, and using the difference of the etching rate, only the first film 12 is eliminated, and a contact hole is automatically formed adjacently to the trench. Since the contact hole is formed in an self-matching manner, working precision of the minimum pattern size in photolithography can be realized. As to the second film 14, sufficient film thickness for functioning as an interlayer insulating film can be ensured. The first film 12 and the second film 14 are positioned above the semiconductor substrate surface, so that the stress at the time of film formation and its working is not applied to the semiconductor substrate.;COPYRIGHT: (C)1997,JPO