MANUFACTURE OF SILICON NITRIDE MEMBRANE AND MEMBER OF SILICON NITRIDE MEMBRANE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon nitride membrane having improved X-ray irradiation immunity and a method of manufacturing a silicon nitride membrane member provided with a silicon nitride membrane having improved X-ray irradiation immunity. ;SOLUTION: In this method, manufacture of a silicon nitride membrane 32 in a member provided with a membrane (self-sustaining thin film) 32 consisting of silicon nitride and a supporting frame 21' of the membrane 32 having an opening part W is performed. In this case, the membrane 32 is to be formed by a reduced pressure (CVD method using SiH₂Cl₂ and NH₃ as a reaction gas in a film-forming condition with a temperature inside a reaction furnace of 900°C or almost 900°C besides SiH₂Cl₂/NH₃ (gas flow ratio) of not exceeding 1 or almost 0.3 to 1.;COPYRIGHT: (C)1997,JPO