CHEMICAL VAPOR PHASE EPITAXY METHOD FOR SILICON DIOXIDE

摘要

PROBLEM TO BE SOLVED: To provide a method of low temperature chemical vapor growth for the growth of a silicon dioxide film on a substrate material. SOLUTION: This method comprises the process of heating a substrate on which the film is grown, at the temperature of 250 to 420 deg.C (482-788 deg.F) in the vacuum of the pressure of 0.1 to 2.0Torr and the process of introducing a co- reacting product of free radical accelerator (for example, di-t-butylperoxide, t-butylhydroperoxide or n-butyl nitrite), together with silane and oxygen, or the silane that contains oxygen.