HETEROGENEOUS EPITAXIAL GROWTH OF ALUMINUM OXIDE SINGLE CRYSTAL FILM ON SILICON SUBSTRATE AND DEVICE USED FOR THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for heteroepitaxially growing an Al₂O₃ single crystal film on a Si substrate, capable of extremely reducing the amount of carbon contaminating the interface of the Si substrate with the Al₂O₃ single crystal film and improving the deterioration in various characteristics of the Al₂O₃ single crystal film, such as crystallizability and surface smoothness by radiating the Si substrate disposed in a vacuum device with N₂O gas and aluminum molecule beams. ;SOLUTION: This method for the heteroepitaxial growth of the Al₂O₃ single crystal film on the Si substrate comprises disposing a chemically cleansed Si substrate 3 in a vacuum device (growth chamber) 5, evacuating the vacuum device 5 with a turbo molecule pump 6 and a rotary pump 7 to a vacuum degree of approximately 1×10^-7Pa to remove impurities contained in air, etc., lowering the vacuum degree of the vacuum device 5 to approximately 3×10^-2Pa, raising the temperature to approximately 850°C, heating solid Al to 1100°C with the heater of a Knudsen cell 2 to melt and evaporate the Al, opening a shutter 4 attached to the irradiation port of the Knudsen cell 2 to irradiate the Si substrate with the produced Al molecule beams, and simultaneously irradiating the Si substrate with N₂O gas from a charging pipe 1 for 30min to heteroepitaxially grow the Al₂O₃ single crystal film on the substrate.;COPYRIGHT: (C)1997,JPO