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SIMULTANEOUSLY FORMING METHOD OF THIN FILM AND THICK FILM RESISTORS ON HYBRID INTEGRATED CIRCUIT BOARD

机译:混合集成电路板上薄膜和厚膜电阻的同时形成方法。

摘要

PROBLEM TO BE SOLVED: To obtain high efficient hybrid integrated circuit simultaneously com bining the merits of high stability and high reliability of a thin film resistor as well as the merit of high output by simultaneously forming a thin film and a thick film resistor. SOLUTION: A thick film resistor is formed on a board 1. A thick film resistor protective film is formed on the thick film resistor 2. Next, a thin film resistor forming Ta and conductive tire forming Ti layer, Pd layer, Cu layer are successively formed by metallic evaporation method. Successively, the conductive wire is formed. Next, a positive sensing agent layer is formed and the parts excluding the thin film resistor producing part, after being exposed to ultraviolet rays to be developed, are removed. Next, the Ta part exposed by removing the positive sensing agent layer is removed by etching away step so as to form a thin film resistor 3 of the other remaining Ta layer. Through these procedures, higher efficient hybrid integrated circuit simultaneously combining the merits of high stability and high reliability with the merit of high output of the thick film resistor can be obtained.
机译:要解决的问题:为了获得高效的混合集成电路,同时兼顾薄膜电阻器和薄膜电阻器的高稳定性和高可靠性以及高输出的优点,从而获得高效率的混合集成电路。解决方案:在板1上形成厚膜电阻器。在厚膜电阻器2上形成厚膜电阻器保护膜。接着,依次形成Ta的薄膜电阻器和形成Ti层,Pd层,Cu层的导电轮胎通过金属蒸发法形成。接着,形成导线。接下来,形成正感测剂层,并且在暴露于要显影的紫外线之后,除去薄膜电阻器产生部分以外的部分。接下来,通过蚀刻掉步骤去除通过去除正感测剂层而暴露的Ta部分,从而形成另一剩余的Ta层的薄膜电阻器3。通过这些步骤,可以获得同时具有高稳定性和高可靠性的优点以及厚膜电阻器的高输出优点的高效混合集成电路。

著录项

  • 公开/公告号JPH09199820A

    专利类型

  • 公开/公告日1997-07-31

    原文格式PDF

  • 申请/专利权人 L SHII JOHO TSUSHIN KK;

    申请/专利号JP19960331291

  • 发明设计人 RI KEIKAN;

    申请日1996-12-11

  • 分类号H05K1/16;H05K3/24;

  • 国家 JP

  • 入库时间 2022-08-22 03:32:24

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