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Sample production manner for analysis of semiconductor equipment and symbolic attaching device null of sample for analysis

机译:用于分析半导体设备和符号附着装置的样品生产方式用于分析的样品

摘要

PURPOSE:To easily specify the cause of a malfunction by applying laser light to a semiconductor, forming a symbol near an improper element on the device, and then analyzing the improper element of the device. CONSTITUTION:A convergent lens 2 and a slit 6 are so used as to freely set the diameter of a laser beam to match the manufacturing rule of a semiconductor device 5 and the size of a symbol. Further, laser power, a position controller 8, a convergent lens system controller 9, drive controller 10 are controlled by a data input unit 11, a semiconductor material, a position of the symbol, the size of the symbol, etc., are input to perform a role of a terminal to control laser energy, the diameter of the laser, a drive system, etc. This system is used to analyze a malfunction by using a 1 megabit DRAM transmission electron microscope and to simultaneously set its analyzing time to the same as the sample manufacturing time of the microscope.
机译:目的:通过向半导体上施加激光,在设备上的不当元件附近形成符号,然后分析设备的不当元件,轻松确定故障原因。组成:会聚透镜2和狭缝6用于自由设置激光束的直径,以匹配半导体器件5的制造规则和符号的大小。此外,激光功率,位置控制器8,会聚透镜系统控制器9,驱动控制器10由数据输入单元11控制,半导体材料,符号的位置,符号的大小等被输入。发挥终端的作用,以控制激光能量,激光直径,驱动系统等。该系统用于通过使用1兆位DRAM透射电子显微镜分析故障,并同时将其分析时间设置为与显微镜的样品制造时间相同。

著录项

  • 公开/公告号JP2667275B2

    专利类型

  • 公开/公告日1997-10-27

    原文格式PDF

  • 申请/专利权人 松下電子工業株式会社;

    申请/专利号JP19900034335

  • 发明设计人 日▲高▼ 義晴;

    申请日1990-02-14

  • 分类号H01L21/66;B23K26/14;G01N1/36;

  • 国家 JP

  • 入库时间 2022-08-22 03:30:19

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