PURPOSE: To make possible a monolithic and integration structure by miniaturizing a negative resistance diode oscillator having a resonator. ;CONSTITUTION: An N-type GaAs contact layer 11, a quantum well structure 12 and an N-type GaAs contact layer 13 are formed in order on an S.I. GaAs substrate 10, and surrounded by a high resistance region 14. Thus a resonance tunnel diode structure is formed. Ohmic electrodes 15, 16 are formed on the contact layers 11, 13. The whole part of the semiconductor substrate except the part of a coupling window 18 is covered with a metal film 17 for constituting a resonator. A quantum well structure 12 is constituted by a multilayered structure of a nondoped GaAs quantum well layer 12a, nondoped AlAs quantum barrier layers 12b which sandwich the layer 12a from both sides, and nondoped GaAS spacer layers 12c which are formed on both sides of the layer 12a.;COPYRIGHT: (C)1996,JPO
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