NOVEL METALLIZATION SIDEWALL PASSIVATION TECHNOLOGY FOR DEEP SUB-HALF MICROMETER IC APPLICATIONS

摘要

Each metal interconnect structure (14) includes an aluminum interconnect (16) sandwiched between two refractory metal layers (18, 20). The method of the present invention involves forming a layer of aluminum intermetallic alloy (24) on the sidewalls (22) of the aluminum interconnnects (16). The layer of aluminum intermetallic alloy (24) comprises aluminum-refractory metal alloy. The aluminum-refractory metal alloy is formed by reacting the exposed aluminum on the sidewalls (22) with refractory metal-containing precursor material.