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NOVEL PROCESSING TECHNIQUES FOR ACHIEVING PRODUCTION-WORTHY, LOW DIELECTRIC, LOW INTERCONNECT RESISTANCE AND HIGH PERFORMANCE IC
NOVEL PROCESSING TECHNIQUES FOR ACHIEVING PRODUCTION-WORTHY, LOW DIELECTRIC, LOW INTERCONNECT RESISTANCE AND HIGH PERFORMANCE IC
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机译:实现高质量,低介电,低互连电阻和高性能IC的新型加工技术
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摘要
The interconnects in a semiconductor device contacting metal lines comprise a low resistance metal, such as copper, gold, silver, or platinum, and are separated by a material having a low dielectric constant, such as benzocyclobutene or a derivative thereof. A tri-layer resist structure is used, together with a lift-off process, to form the interconnects. The low dielectric constant material provides a diffusion barrier to the diffusion of the low resistance metal. The tri-layer resist comprises a first layer of a dissolvable polymer, a second layer of a hard mask material, and a third layer of a resist material. The resulting structure provides an integrated circuit with increased speed and ease of fabrication.
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