Process gas mixing and diffusion device for low pressure chemical vapor deposition equipment for semiconductor manufacturing process

摘要

The process gas introduced during the low pressure chemical vapor deposition process for semiconductor manufacturing is sufficiently mixed on the flow path and then diffused into the reaction chamber so as to be uniformly deposited on the wafer surface.;To this end, the present invention is a grid-like flow path (2) is formed to uniformly mix the process gas on the wall (1) of the reaction chamber, a plurality of mixed gas diffusion holes on the mixed gas outlet (3) side of the reaction chamber A process gas mixing and diffusion device for a low pressure chemical vapor deposition apparatus for a semiconductor manufacturing process, in which a cap-shaped diffuser 5 in which (4) is formed is provided.