Heterojunction Bipolar Transistor with Improved Negative Resistance Output Characteristics

摘要

The present invention relates to a structure of a heterojunction bipolar transistor (abbreviated as HBT) having improved negative resistance output characteristics. The present invention relates to a semi-insulating semiconductor substrate for improving negative resistance output characteristics. The heterojunction bipolar transistor comprising a collector portion formed on the semiconductor substrate, a base portion formed on the collector portion, an emitter portion formed on the base portion, and a protective layer portion formed on the emitter portion, wherein the emitter portion includes: Since the first emitter grading formed on the base portion, the emitter formed on the emitter grading, and the second emitter grading formed on the emitter are formed, the effect is that the existing thermal known as the cause of the negative resistance characteristic. In addition to the new electrical phenomena, the negative resistance output characteristics of HBT By line reduces the integrated circuit device configured power consumption at the operating point in reducing the power consumption lies in that have many choices in the design of the integrated circuit.